PART |
Description |
Maker |
SFF40N30P SFF40N30N |
40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
4N50 4N50L-TA3-T 4N50G-TA3-T 4N50L-TF3-T 4N50G-TF3 |
4 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
1N50 1N50L-TA3-T 1N50G-TA3-T |
1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
SDA160F SDA160A SDA160B SDA160C SDA160D SDA160E |
40 AMPS 50 ─ 300 VOLTS HYPER FAST RECOVERY THREE PHASE BRIDGE RECTIFIER 40 AMPS 50 Α 300 VOLTS HYPER FAST RECOVERY THREE PHASE BRIDGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
MTW14N50E-D |
Power MOSFET 14 Amps, 500 Volts N-Channel TO-247
|
ON Semiconductor
|
SDR9105CTP SDR9103CTN SDR9103CTP SDR9104CTN SDR910 |
100 AMP, 300 - 500 VOLTS 40 nsec HYPER FAST CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
NTB90N02 NTB90N02T4 NTP90N02 |
Power MOSFET 90 Amps / 24 Volts TV 18C 14#22D 4#8(TWINAX) PIN 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 90 Amps, 24 Volts Power MOSFET 90 Amps 24 Volts
|
ONSEMI[ON Semiconductor]
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V,P通道,SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23 Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223 20V P-ch HD3e SOT223
|
ONSEMI ON Semiconductor
|
VC0603K300R014 |
Varistors, VC, Low Voltage, 18 V, 14 VAC, 22 V, 38 V, 1 Amps, 30 Amps, 300 mJ, 3000 uW
|
Kemet Corporation
|